TY  - CONF

T1  - Analytical modelling of SiC MOSFET based on datasheet parameters considering the dynamic transfer characteristics and channel resistance dependency on the drain voltage

JO  - 2023 IEEE Applied Power Electronics Conference and Exposition (APEC)

UR  - http://dx.doi.org/10.1109/apec43580.2023.10131160

PY  - 2023/03/19

AU  - Betha HV

AU  - Odavic M

AU  - Atallah K

ED  - 

DO  - DOI: 10.1109/apec43580.2023.10131160

PB  - IEEE

Y2  - 2024/12/28

ER  -