@inproceedings{inproceedings, title  = {{Analytical modelling of SiC MOSFET based on datasheet parameters considering the dynamic transfer characteristics and channel resistance dependency on the drain voltage}},

 publisher = {{IEEE}},

 url = {{http://dx.doi.org/10.1109/apec43580.2023.10131160 }},

 year = {{2023}},

 month = {{3}},

 author = {{Betha HV and Odavic M and Atallah K}},

 doi = {{10.1109/apec43580.2023.10131160}},

 journal = {{2023 IEEE Applied Power Electronics Conference and Exposition (APEC)}},

 note = {{Accessed on 2024/12/28}}}