@inproceedings{inproceedings, title  = {{Observations of low frequency admittance between isolated GaAs structures formed by ion implantation and by epitaxy on epitaxial buffer layers prepared at high and low temperatures}},

 url = {{}},

 year = {{1996}},

 month = {{12}},

 author = {{Boroumand FA and Khalid AH and Hopkinson M and Swanson JG}},

 journal = {{IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC}},

 pages = {{51-54}},

 note = {{Accessed on 2024/12/27}}}